PART |
Description |
Maker |
ARF447 ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
STP4NB50FP STP4NB50 5320 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
意法半导 STMicro
|
IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
APM2317AC-TRL |
P-Channel Enhancement Mode MOSFET 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics, Corp.
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的,单台BLOk反应腔二极管隔离模块(二五?安高达2400伏特
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
STP60NE03L-10 5467 |
PC 26C 26#20 PIN RECP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|